A unified model for insulator selection to form ultra-low resistivity metal- insulator-semiconductor contacts to n-Si, n-Ge, and n-InGaAs

Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts

A Novel SOI MESFET by Implanted N Layer (INL-SOI) for High Performance Applications

This paper introduces a novel silicon-on-insulator (SOI) metal–semiconductor field-effect transistor (MESFET) with an implanted N layer (INL-SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by the 2-D ATLAS simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated result...

Metal-Insulator-Semiconductor Photodetectors

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regi...

Short Course Emerging Technologies for Post 14nm Cmos

It is well recognized that new device engineering is indispensable in overcoming difficulties of advanced CMOS and realizing high performance LSIs under 10 nm regime. Here, the channel materials with high mobility and, more essentially, low effective mass, are preferable under quasi-ballistic transport expected in ultra-short channel regime. From this viewpoint, Ge and IIIV semiconductor channe...

Extremely thin - body ballistic n - MOSFET designs involving transport in mixed Γ - L valleys

Transistor designs based on using mixed Γ-L valleys for electron transport are proposed to overcome the DOS bottleneck while maintaining high injection velocities. Using a self consistent top-of-the-barrier transport model, improved current density over Si is demonstrated in GaAs/AlAsSb, GaSb/AlAsSb and Ge-on-insulator (Ge-OI) based single-gate (SG) thin-body n-channel metal-oxide-semiconductor...